Magnetoresistance in MOSFETs with ferromagnetic MnAs source and drain contacts: Spin injection and transport in Si MOS channels

Author

Nakane, R. ; Harada, T. ; Sugiura, K. ; Sugahara, S. ; Tanaka, M.

Author_Institution

Dept. of Electron. Eng., Univ. of Tokyo, Tokyo

fYear

2008

fDate

23-25 June 2008

Firstpage

227

Lastpage

228

Abstract

Summary form only given. Recently-proposed spin metal-oxide-semiconductor field-effect transistors (spin MOSFETs) are expected to be key devices for advancing the integrated circuit technology beyond the CMOS scaling. Towards the integration of spin MOSFETs with a CMOS platform, experimental demonstration and critical understanding of output characteristics are strongly needed. In this paper, we present the magnetoresistance and spin transport in MOSFETs with ferromagnetic MnAs source/drain (S/D) contacts.

Keywords

CMOS integrated circuits; MOSFET; elemental semiconductors; ferromagnetic materials; magnetoresistance; manganese compounds; silicon; spin polarised transport; CMOS scaling; MOSFET; MnAs; Si; drain contacts; ferromagnetic source; ferromagnetic source/drain contacts; magnetoresistance; source contacts:; spin injection; spin metal-oxide-semiconductor field-effect transistors; spin transport; CMOS technology; Dielectric substrates; Integrated circuit technology; MOSFETs; Magnetic field measurement; Magnetic hysteresis; Magnetoresistance; Molecular beam epitaxial growth; Spin polarized transport; Temperature dependence;

fLanguage

English

Publisher

ieee

Conference_Titel

Device Research Conference, 2008

Conference_Location

Santa Barbara, CA

ISSN

1548-3770

Print_ISBN

978-1-4244-1942-5

Electronic_ISBN

1548-3770

Type

conf

DOI

10.1109/DRC.2008.4800815

Filename

4800815