Title :
Tunneling Magnetoresistance in Exchange Biased Ferromagnetic Semiconductor Tunnel Junctions
Author :
Zhu, Meng ; Wilson, Mark ; Mitra, Partha ; Schiffer, Peter ; Samarth, Nitin
Author_Institution :
Dept. of Phys., Pennsylvania State Univ., University Park, PA
Abstract :
Summary form only given.Here, we demonstrate the observation of TMR in exchange-biased MTJs derived from the ferromagnetic semiconductor (Ga,Mn)As. Although still limited to operation at low temperatures, these devices provide an important step forward in exploring proof-of-concept semiconductor spintronic tunneling devices.
Keywords :
III-V semiconductors; ferromagnetic materials; gallium arsenide; magnetoelectronics; manganese compounds; semiconductor junctions; tunnelling magnetoresistance; GaMnAs; exchange biased ferromagnetic semiconductor tunnel junctions; magnetic tunnel junctions; metal-based spintronics; proof-of-concept semiconductor spintronic tunneling devices; tunneling magnetoresistance; Antiferromagnetic materials; Insulation; Magnetic anisotropy; Magnetic field measurement; Magnetic separation; Magnetic tunneling; Magnetization; Magnetoelectronics; SQUIDs; Tunneling magnetoresistance;
Conference_Titel :
Device Research Conference, 2008
Conference_Location :
Santa Barbara, CA
Print_ISBN :
978-1-4244-1942-5
Electronic_ISBN :
1548-3770
DOI :
10.1109/DRC.2008.4800816
