DocumentCode :
2984206
Title :
Monolithic integration of electronic and electro-optical devices exploiting the AlGaN/GaN-LiNbO3 material system
Author :
Madison, Shannon M. ; Henderson, Walter ; Gon Nainkoong ; Lee, Kyoung-Keun ; Patel, Ketan M. ; Doolittle, W. Alan ; Ralph, Stephen E.
Author_Institution :
Sch. of Electr. & Comput. Eng., Georgia Inst. of Technol., Atlanta, GA, USA
Volume :
3
fYear :
2005
fDate :
22-27 May 2005
Firstpage :
1605
Abstract :
The development of the monolithic integration of AlGaN/GaN FETs with LiNbO3 structures for optical signal processing is presented. Wc also present new III-nitride material growth details and electronic device performance.
Keywords :
III-V semiconductors; aluminium compounds; electro-optical devices; field effect transistors; gallium compounds; integrated optics; integrated optoelectronics; lithium compounds; monolithic integrated circuits; semiconductor growth; AlGaN-GaN-LiNbO3; AlGaN-GaN-LiNbO3 material system; FET; III-nitride material growth; electro-optical devices; electronic devices; monolithic integration; optical signal processing; Aluminum gallium nitride; Consumer electronics; Electrooptic devices; Gallium nitride; Monolithic integrated circuits; Optical devices; Optical modulation; Optical sensors; Optical signal processing; Substrates;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Lasers and Electro-Optics, 2005. (CLEO). Conference on
Print_ISBN :
1-55752-795-4
Type :
conf
DOI :
10.1109/CLEO.2005.202213
Filename :
1573279
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2984206
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