DocumentCode :
2984284
Title :
High-Performance Air-Stable Solution Processed Organic Transistors
Author :
Liu, Zihong ; Becerril, Hector A. ; Roberts, Mark E. ; Nishi, Yoshio ; Bao, Zhenan
Author_Institution :
Dept. of Electr. Eng., Stanford Univ., Stanford, CA
fYear :
2008
fDate :
23-25 June 2008
Firstpage :
239
Lastpage :
240
Abstract :
Solution-processed organic field-effect transistors (SPOFETs) have attracted wide interest in the past decade as they hold great promise for roll-to-roll production of ubiquitous flexible electronic circuits, displays, etc. by low-cost unconventional means, such as screen and inkjet printing. Despite the tremendous progress, it remains a challenge to fabricate consistently high-mobility air-stable SPOFETs at low-temperature for practical applications. Here we present high performance (mobility up to 0.2-0.4 cm2/Vs, Ion/Ioff>106), air-stable (monitored over 200 days without noticeable degradation) SPOFETs based on a developed solution process using asymmetric soluble small molecule semiconductor, 4T-TMS. The systematic experimental study on the process control for these SPOFETs was also be reported.
Keywords :
field effect transistors; organic semiconductors; 4T-TMS; asymmetric soluble small molecule semiconductor; solution-processed organic field-effect transistors; Chemical engineering; Crystallization; Flexible electronics; OFETs; Production; Shearing; Solvents; Substrates; Temperature control; Thin film devices;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Device Research Conference, 2008
Conference_Location :
Santa Barbara, CA
ISSN :
1548-3770
Print_ISBN :
978-1-4244-1942-5
Electronic_ISBN :
1548-3770
Type :
conf
DOI :
10.1109/DRC.2008.4800820
Filename :
4800820
Link To Document :
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