AMOLED Reliability with a-Si TFT´s in Normal vs. Inverted TFT/OLED Integration Scheme

Author

Hekmatshoar, Bahman ; Cherenack, Kunigunde ; Long, Ke ; Kattamis, Alex ; Wagner, Sigurd ; Sturm, James C.

Author_Institution

Dept. of Electr. Eng., Princeton Univ., Princeton, NJ

fYear

2008

fDate

23-25 June 2008

Firstpage

243

Lastpage

244

Abstract

An important technical issue associated with using a-Si for AMOLED displays is the direct voltage programming of the pixel by providing a constant current source to the OLED. Since only n-channel a-Si TFT´s are available, this requires connecting the driver TFT to the OLED cathode rather than the OLED anode which is not conventionally possible without inverting the OLED stack. This paper reports on the luminance decay vs. time in either normal or inverted pixels may be predicted by measuring the drift in the characteristics of individual TFT and OLED component. Also, the luminance decay is lower in the inverted structure, because of the lack of dependence on the OLED voltage rise.

Keywords

LED displays; amorphous semiconductors; brightness; elemental semiconductors; organic light emitting diodes; semiconductor device reliability; silicon; thin film transistors; AMOLED displays; OLED; TFT; inverted structure; luminance decay; reliability; Active matrix organic light emitting diodes; Circuits; Current measurement; Flat panel displays; Organic light emitting diodes; Plastics; Testing; Thin film transistors; Threshold voltage; Time measurement;

fLanguage

English

Publisher

ieee

Conference_Titel

Device Research Conference, 2008

Conference_Location

Santa Barbara, CA

ISSN

1548-3770

Print_ISBN

978-1-4244-1942-5

Electronic_ISBN

1548-3770

Type

conf

DOI

10.1109/DRC.2008.4800822

Filename

4800822