Title :
Electrical Detection of Biological Conjugation by AlGaN/GaN Heterostructure Field Effect Transistors
Author :
Wen, Xuejin ; Wang, Shengnian ; Gupta, Samit K. ; Shapiro, John ; Brillson, Leonard J. ; Lee, Stephen C. ; Lee, James L. ; Lu, Wu
Author_Institution :
Dept. of Electr. & Comput. Eng., Ohio State Univ., Columbus, OH
Abstract :
The article presents the electrical detection of streptavidin and monokin induced by interferon gamma proteins and hybridization process of single strand DNA by AlGaN/GaN HFETs. For protein conjugation detection, AlGaN gate surface was functionalized by oxidation, 3-aminopropyltriethoxysilane treatment, and biotinylation using NHS-sulfo-biotin. For streptavidin (STA) detection, at different ionic strengths, the effect of Debye length on detection sensitivity has been demonstrated. For DNA hybridization detection, 12-mer prime ssDNA with matched and mismatched sequences were used as probe and target molecules.
Keywords :
DNA; III-V semiconductors; aluminium compounds; bioelectric phenomena; biological techniques; gallium compounds; high electron mobility transistors; molecular biophysics; proteins; wide band gap semiconductors; 3-aminopropyltriethoxysilane treatment; AlGaN-GaN; Debye length; HFET; biological conjugation; biotinylation; heterostructure field effect transistors; interferon gamma proteins; ionic strengths; monokin detection; oxidation; protein conjugation detection; single strand DNA hybridization; streptavidin detection; Aluminum gallium nitride; DNA; Gallium nitride; Gamma ray detection; Gamma ray detectors; HEMTs; MODFETs; Oxidation; Proteins; Surface treatment;
Conference_Titel :
Device Research Conference, 2008
Conference_Location :
Santa Barbara, CA
Print_ISBN :
978-1-4244-1942-5
Electronic_ISBN :
1548-3770
DOI :
10.1109/DRC.2008.4800826
