DocumentCode :
2984537
Title :
Resonant Tunneling Diodes with Very High Peak Current Density Using Thin Barrier and High Emitter Doping
Author :
Teranishi, A. ; Suzuki, S. ; Sugiyama, H. ; Yokoyama, H. ; Asada, Minoru
Author_Institution :
Tokyo Inst. of Technol., Tokyo
fYear :
2008
fDate :
23-25 June 2008
Firstpage :
265
Lastpage :
266
Abstract :
We obtained InGaAs/AlAs double-barrier resonant tunneling diodes (DB RTDs) with very high peak current density using thin barrier and high emitter doping. The peak current density of 13 mA/mum2 with the peak/valley current ratio of 1.5 was obtained for 1.4-nm-thick barrier and emitter doping concentration of 6 times 1018cm-3. By these characteristics, oscillators with the fundamental oscillation exceeding 1 THz are sufficiently possible.
Keywords :
III-V semiconductors; aluminium compounds; current density; doping profiles; gallium arsenide; indium compounds; resonant tunnelling diodes; semiconductor doping; InGaAs-AlAs; barrier thickness; doping concentration; double-barrier resonant tunneling diodes; peak current density; peak/valley current ratio; size 1.4 nm; Current density; Diodes; Doping; Electron emission; Indium gallium arsenide; Neodymium; Oscillators; Photonics; Resonant tunneling devices; Temperature;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Device Research Conference, 2008
Conference_Location :
Santa Barbara, CA
ISSN :
1548-3770
Print_ISBN :
978-1-4244-1942-5
Electronic_ISBN :
1548-3770
Type :
conf
DOI :
10.1109/DRC.2008.4800832
Filename :
4800832
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2984537
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