DocumentCode
2984593
Title
Room-Temperature Operation of MOCVD-Grown GaInAs/InP Strahed-Layer Multiquantum Well Lasers in the 1.8/spl mu/m Range
Author
Forouhar, S. ; Larsson, A. ; Ksendzov, A. ; Lang, R.J.
Author_Institution
Jet Propulsion Laboratory/California Institute of Technology
fYear
1992
fDate
21-24 June 1992
Keywords
Gas lasers; Indium gallium arsenide; Indium phosphide; Laser modes; Optical pulses; Quantum well lasers; Space technology; Substrates; Threshold current; Waveguide lasers;
fLanguage
English
Publisher
ieee
Conference_Titel
Device Research Conference, 1992. Digest. 50th Annual
Conference_Location
Cambridge, MA, USA
Type
conf
DOI
10.1109/DRC.1992.671892
Filename
671892
Link To Document