DocumentCode :
2984623
Title :
Read Disturb in NROM Charge Trapping Non-Volatile Memory Device
Author :
Shainsky, Natalie ; Bloom, Ilan ; Shacham, Yosi ; Eitan, Boaz
Author_Institution :
Electr. Eng., Tel Aviv Univ., Ramat Aviv
fYear :
2008
fDate :
23-25 June 2008
Firstpage :
277
Lastpage :
278
Abstract :
We investigated threshold voltage (VT) shifts during read operation of NROM devices in advanced non-volatile memory (NVM) process generations (75nm). For the first time it is demonstrated that channel-initiated secondary electron injection (CHISEL) mechanism is the main source of the "read disturb" experimental results in advanced process devices. This mechanism is generic to non-volatile memories (NVM) devices and must be minimized to avoid data corruption during read.
Keywords :
random-access storage; NROM charge trapping nonvolatile memory device; advanced process devices; channel-initiated secondary electron injection mechanism; data corruption; nonvolatile memory process generations; read operation; size 75 nm; threshold voltage shifts; Acceleration; Channel hot electron injection; Charge carrier processes; Electron traps; Low voltage; Nonvolatile memory; Radiative recombination; Spontaneous emission; Threshold voltage; Tunneling;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Device Research Conference, 2008
Conference_Location :
Santa Barbara, CA
ISSN :
1548-3770
Print_ISBN :
978-1-4244-1942-5
Electronic_ISBN :
1548-3770
Type :
conf
DOI :
10.1109/DRC.2008.4800837
Filename :
4800837
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2984623
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