Power devices in Polish national silicon carbide program

Author

Sochacki, Mariusz ; Kubiak, Andrzej ; Lisik, Zbigniew ; Szmidt, Jan

Author_Institution

Inst. of Microelectron. & Optoelectron., Warsaw Univ. of Technol., Warsaw

fYear

2008

fDate

1-3 Sept. 2008

Firstpage

2452

Lastpage

2456

Abstract

Polish Government Program ldquoNew technologies based on silicon carbide and their applications in high frequency, high power and high temperature electronics rdquo covers an project package that consists of three general tasks. The contribution presents the overview of projects in the field dealing with the design and manufacturing of power SiC semiconductor devices.

Keywords

MOSFET; Schottky diodes; junction gate field effect transistors; p-i-n diodes; power semiconductor diodes; silicon compounds; JFET; MOSFET; PIN diode; Schottky diode; SiC; electronic package; high frequency electronics; high power electronics; high temperature electronics; semiconductor device design; semiconductor power devices; silicon carbide; Frequency; Manufacturing; Schottky diodes; Semiconductor device manufacture; Silicon carbide; Substrates; Temperature; Thermal conductivity; Thermal management of electronics; Thermal stresses; JFET; MOSFET; PiN diode; Schottky diode; silicon carbide;

fLanguage

English

Publisher

ieee

Conference_Titel

Power Electronics and Motion Control Conference, 2008. EPE-PEMC 2008. 13th

Conference_Location

Poznan

Print_ISBN

978-1-4244-1741-4

Electronic_ISBN

978-1-4244-1742-1

Type

conf

DOI

10.1109/EPEPEMC.2008.4635631

Filename

4635631