Title :
Power devices in Polish national silicon carbide program
Author :
Sochacki, Mariusz ; Kubiak, Andrzej ; Lisik, Zbigniew ; Szmidt, Jan
Author_Institution :
Inst. of Microelectron. & Optoelectron., Warsaw Univ. of Technol., Warsaw
Abstract :
Polish Government Program ldquoNew technologies based on silicon carbide and their applications in high frequency, high power and high temperature electronics rdquo covers an project package that consists of three general tasks. The contribution presents the overview of projects in the field dealing with the design and manufacturing of power SiC semiconductor devices.
Keywords :
MOSFET; Schottky diodes; junction gate field effect transistors; p-i-n diodes; power semiconductor diodes; silicon compounds; JFET; MOSFET; PIN diode; Schottky diode; SiC; electronic package; high frequency electronics; high power electronics; high temperature electronics; semiconductor device design; semiconductor power devices; silicon carbide; Frequency; Manufacturing; Schottky diodes; Semiconductor device manufacture; Silicon carbide; Substrates; Temperature; Thermal conductivity; Thermal management of electronics; Thermal stresses; JFET; MOSFET; PiN diode; Schottky diode; silicon carbide;
Conference_Titel :
Power Electronics and Motion Control Conference, 2008. EPE-PEMC 2008. 13th
Conference_Location :
Poznan
Print_ISBN :
978-1-4244-1741-4
Electronic_ISBN :
978-1-4244-1742-1
DOI :
10.1109/EPEPEMC.2008.4635631
