DocumentCode
2984671
Title
SiC power semiconductor devices for new applications in power electronics
Author
Planson, Dominique ; Tournier, Dominique ; Bevilacqua, Pascal ; Dheilly, Nicolas ; Morel, Herve ; Raynaud, Christophe ; Lazar, Mihai ; Bergogne, Dominique ; Allard, Bruno ; Chante, Jean-Pierre
Author_Institution
Ampere Lab. INSA Lyon, Villeurbanne
fYear
2008
fDate
1-3 Sept. 2008
Firstpage
2457
Lastpage
2463
Abstract
This paper addresses the benefits of SiC semiconductor, owning excellent physical properties able to fulfill new scope of applications in terms of high temperature, high voltage and for more specific applications. Devices and applications developed at Ampere laboratory are detailed.
Keywords
high-temperature electronics; power electronics; power semiconductor devices; silicon compounds; wide band gap semiconductors; Ampere laboratory; SiC; high temperature electronics; power electronics; power semiconductor device; Power electronics; Power semiconductor devices; Protection; Semiconductor diodes; Semiconductor materials; Silicon carbide; Switching converters; Temperature; Transformers; Voltage; High temperature electronics; High voltage Device; Power integrated circuit; Power semiconductor device; SiC-device;
fLanguage
English
Publisher
ieee
Conference_Titel
Power Electronics and Motion Control Conference, 2008. EPE-PEMC 2008. 13th
Conference_Location
Poznan
Print_ISBN
978-1-4244-1741-4
Electronic_ISBN
978-1-4244-1742-1
Type
conf
DOI
10.1109/EPEPEMC.2008.4635632
Filename
4635632
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