• DocumentCode
    2984681
  • Title

    Characteristics of high performance 1.3 μm tunnel injection quantum dot lasers

  • Author

    Mi, Z. ; Fathpour, S. ; Bhattacharya, Pallab

  • Author_Institution
    Dept. of Electr. Eng. & Comput. Sci., Michigan Univ., Ann Arbor, MI, USA
  • Volume
    3
  • fYear
    2005
  • fDate
    22-27 May 2005
  • Firstpage
    1677
  • Abstract
    1.3 μm tunnel injection InAs quantum dot lasers are reported for the first time. They exhibit T0 = ∞ (5°C ≤ T ≤ 70°C), a -3 dB modulation bandwidth of 11 GHz, and near-zero α-factor and chirp.
  • Keywords
    chirp modulation; optical modulation; quantum dot lasers; 1.3 mum; 11 GHz; InAs; InAs lasers; near-zero α-factor; near-zero chirp; quantum dot lasers; tunnel injection lasers; Bandwidth; Chirp modulation; Gallium arsenide; Laser theory; Quantum dot lasers; Semiconductor lasers; Substrates; Threshold current; US Department of Transportation; Waveguide lasers;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Lasers and Electro-Optics, 2005. (CLEO). Conference on
  • Print_ISBN
    1-55752-795-4
  • Type

    conf

  • DOI
    10.1109/CLEO.2005.202238
  • Filename
    1573304
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2984681