DocumentCode :
2984681
Title :
Characteristics of high performance 1.3 μm tunnel injection quantum dot lasers
Author :
Mi, Z. ; Fathpour, S. ; Bhattacharya, Pallab
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., Michigan Univ., Ann Arbor, MI, USA
Volume :
3
fYear :
2005
fDate :
22-27 May 2005
Firstpage :
1677
Abstract :
1.3 μm tunnel injection InAs quantum dot lasers are reported for the first time. They exhibit T0 = ∞ (5°C ≤ T ≤ 70°C), a -3 dB modulation bandwidth of 11 GHz, and near-zero α-factor and chirp.
Keywords :
chirp modulation; optical modulation; quantum dot lasers; 1.3 mum; 11 GHz; InAs; InAs lasers; near-zero α-factor; near-zero chirp; quantum dot lasers; tunnel injection lasers; Bandwidth; Chirp modulation; Gallium arsenide; Laser theory; Quantum dot lasers; Semiconductor lasers; Substrates; Threshold current; US Department of Transportation; Waveguide lasers;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Lasers and Electro-Optics, 2005. (CLEO). Conference on
Print_ISBN :
1-55752-795-4
Type :
conf
DOI :
10.1109/CLEO.2005.202238
Filename :
1573304
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2984681
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