Title :
Surface control of AlGaN for the stability improvement of AlGaN/GaN HEMTs
Author :
Hashizume, Tamotsu
Author_Institution :
Res. Center for Integrated Quantum Electron., Hokkaido Univ., Sapporo
Abstract :
Highly stable and reliable operation is absolutely required for GaN-based high-efficiency power switching devices and high-power RF AlGaN/GaN HEMTs. For the improvement of operation stability in such devices, in this paper, the surface control technologies will be addressed by introducing an ultrathin-Al-layer process and a multi-mesa-channel structure with relevant technologies.
Keywords :
III-V semiconductors; aluminium compounds; gallium compounds; high electron mobility transistors; semiconductor device reliability; wide band gap semiconductors; AlGaN-GaN; HEMT; stability improvement; surface control; Aluminum gallium nitride; Electrodes; Gallium nitride; Gold; HEMTs; MODFETs; Process control; Stability; Stress; Temperature;
Conference_Titel :
Device Research Conference, 2008
Conference_Location :
Santa Barbara, CA
Print_ISBN :
978-1-4244-1942-5
Electronic_ISBN :
1548-3770
DOI :
10.1109/DRC.2008.4800840
