Title :
Oscillating temperature selenization of Cu, Ga, In elemental layers in a Se vapour [CuGaInSe2 solar cells]
Author :
Romeo, N. ; Bosio, A. ; Canevari, V. ; Tedeschi, R.
Author_Institution :
Dipartimento di Fisica, Parma Univ., Italy
Abstract :
CuGa0.3In0.7Se2 thin films have been grown by selenization of Cu, Ga, In elemental layers in a Se vapour by a novel method in which a first part of the film is prepared by making the substrate temperature to oscillate between 200-230°C and 480-550°C with a risetime of 1-2 minutes and cooling down time of 6-9 minutes. The film is completed by increasing the substrate temperature from 380°C to 480-500°C with a ramp of 1-2°C/min. X-ray spectra and scanning electron micrographs indicate that the films are monophasic and very well crystallized with a strong orientation along the (112) direction. CuGa0.3In0.7Se2/CdS thin film solar cells made on both Corning 7059 or Soda Lime glass substrates exhibit an efficiency larger than 12%
Keywords :
X-ray spectroscopy; copper compounds; gallium compounds; indium compounds; scanning electron microscopy; semiconductor device testing; semiconductor growth; semiconductor thin films; solar cells; substrates; vacuum deposited coatings; vacuum deposition; 1 to 2 min; 200 to 230 C; 380 C; 480 to 500 C; 480 to 550 C; 6 to 9 min; Corning 7059 substrate; CuGa0.3In0.7Se2; Soda Lime glass substrate; X-ray spectra; efficiency; elemental layers; monophasic thin film semiconductor; orientation; oscillating temperature selenization; scanning electron micrographs; solar cell; substrate temperature; Annealing; Cooling; Electrons; Glass; Photovoltaic cells; Physics; Substrates; Surface tension; Temperature; Transistors;
Conference_Titel :
Photovoltaic Energy Conversion, 1994., Conference Record of the Twenty Fourth. IEEE Photovoltaic Specialists Conference - 1994, 1994 IEEE First World Conference on
Conference_Location :
Waikoloa, HI
Print_ISBN :
0-7803-1460-3
DOI :
10.1109/WCPEC.1994.519836
