DocumentCode
298490
Title
The low temperature deposition of ICB-grown CuInSe2 thin films [solar cells]
Author
Sano, Hiroyuki ; Nakamura, Susumu ; Kondo, Ken´chi ; Sato, Katsuaki
Author_Institution
Stanley Electr. Co. Ltd., Yokohama, Japan
Volume
1
fYear
1994
fDate
5-9 Dec 1994
Firstpage
179
Abstract
Superstrate-type solar cells were successfully fabricated for the first time using CuInSe2 thin films prepared by the ICB (ionized cluster beam) technique. The substrate temperature was as low as 300°C. The films were characterized by EPMA, X-ray diffraction and PL spectrum. SEM micrographs and photovoltaic properties were also investigated on the solar cells. Results showed nearly stoichiometric composition with grain size about 1 μm. The superstrate-type solar cells showed a conversion efficiency of 2.06%
Keywords
X-ray diffraction; copper compounds; electron probe analysis; grain size; indium compounds; ionised cluster beam deposition; semiconductor device testing; semiconductor growth; semiconductor thin films; solar cells; substrates; vapour deposited coatings; 1 mum; 2.06 percent; 300 C; CuInSe2; EPMA; PL spectrum; SEM micrographs; X-ray diffraction; conversion efficiency; grain size; ionized cluster beam deposition; photovoltaic properties; stoichiometric composition; substrate temperature; superstrate-type solar cells; thin film semiconductor; Acceleration; Electron beams; Glass; Photovoltaic cells; Semiconductor films; Sputtering; Substrates; Temperature; Transistors; X-ray diffraction;
fLanguage
English
Publisher
ieee
Conference_Titel
Photovoltaic Energy Conversion, 1994., Conference Record of the Twenty Fourth. IEEE Photovoltaic Specialists Conference - 1994, 1994 IEEE First World Conference on
Conference_Location
Waikoloa, HI
Print_ISBN
0-7803-1460-3
Type
conf
DOI
10.1109/WCPEC.1994.519837
Filename
519837
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