• DocumentCode
    2984945
  • Title

    3D Simulations of Width Effect on Performance in NMOSFETs with SiC S/D Stressors and CSEL Linear

  • Author

    Wang, W.C. ; Chang, S.T. ; Huang, Jacky ; Liao, S.H. ; Lin, C.Y.

  • Author_Institution
    Nat. Chung Hsing Univ., Taichung
  • fYear
    2007
  • fDate
    20-22 Dec. 2007
  • Firstpage
    1071
  • Lastpage
    1074
  • Abstract
    Stress distribution in the Si channel regions of SiC source/drain NMOSFETs with various widths is studied by 3D simulations. The impact of width on performance improvement is analyzed.
  • Keywords
    MOSFET; semiconductor device models; silicon compounds; 3D simulations; CSEL linear; NMOSFET; S/D stressors; SiC; stress distribution; width effect; Effective mass; Electron mobility; Lattices; MOS devices; MOSFET circuits; Performance analysis; Photonic band gap; Piezoresistance; Silicon carbide; Stress;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices and Solid-State Circuits, 2007. EDSSC 2007. IEEE Conference on
  • Conference_Location
    Tainan
  • Print_ISBN
    978-1-4244-0637-1
  • Electronic_ISBN
    978-1-4244-0637-1
  • Type

    conf

  • DOI
    10.1109/EDSSC.2007.4450313
  • Filename
    4450313
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2984945