Title :
Photovoltaic cells with efficiency exceeding 10% using monocrystalline CuInSe2 substrates
Author :
Yip, L.S. ; Shih, I.
Author_Institution :
Dept. of Electr. Eng., McGill Univ., Montreal, Que., Canada
Abstract :
Photovoltaic cells with the structure of ZnO/CdS/CuInSe2 have been fabricated on single crystal CuInSe 2 substrates obtained from p-type Bridgman-grown ingots. A chemical bath method was used to deposit the CdS film onto the abrasively-polished CuInSe2 substrates while RF sputtering was employed for the ZnO deposition. It was found that the performance of these cells were dominated by the high density of surface defects, which could be reduced by a substrate annealing prior to the CdS deposition. A conversion efficiency of 10.3% at about AM 1.5 under the Sun has been achieved on solar cells with an effective area of 8 mm2. An antireflection coating was not used in the present case
Keywords :
II-VI semiconductors; annealing; cadmium compounds; copper compounds; crystal growth from melt; electrodeposition; electrodeposits; indium compounds; semiconductor device testing; semiconductor growth; semiconductor thin films; solar cells; sputter deposition; sputtered coatings; substrates; ternary semiconductors; zinc compounds; 10.3 percent; CuInSe2-CdS-ZnO; RF sputtering; chemical bath method; monocrystalline substrates; p-type Bridgman-grown ingots; photovoltaic cells; solar cell; substrate annealing; surface defects; thin film semiconductor; Abrasives; Annealing; Chemicals; Coatings; Photovoltaic cells; Sputtering; Substrates; Sun; Transistors; Zinc oxide;
Conference_Titel :
Photovoltaic Energy Conversion, 1994., Conference Record of the Twenty Fourth. IEEE Photovoltaic Specialists Conference - 1994, 1994 IEEE First World Conference on
Conference_Location :
Waikoloa, HI
Print_ISBN :
0-7803-1460-3
DOI :
10.1109/WCPEC.1994.519845
