Title :
Fabrication and characterization of thin films of CuIn(S,Se)2 quaternary compounds obtained by close-spaced vapor transport
Author :
Guastavino, F. ; Zouaoui, A. ; Llinarès, C. ; Djessas, K. ; Massé, G.
Author_Institution :
Centre d´´Electron. de Montpellier, Univ. des Sci. et Tech. du Languedoc, Montpellier, France
Abstract :
Close-spaced vapor transport in a vertical closed tube has been used and successfully developed for growing large area CuInSe2 thin films. This method has been applied also to different Cu(In,Ga)(Se,Te)2 ternary compounds. In this paper we present results concerning CuInSxSe2-x with composition x varying from 0 to 2.00. The parameters of quasi-stoichiometric deposition are determined. We can obtain columnar grains of nearly 10 μm diameter, well oriented in the (112) direction. Deviations from these parameters induce the presence of copper iodide in the samples (source temperature below the optimal one) or the formation of (In,Se) compounds (source temperature above the optimal one)
Keywords :
CVD coatings; chemical vapour deposition; copper compounds; indium compounds; semiconductor growth; semiconductor materials; semiconductor thin films; ternary semiconductors; (112) direction orientation; (In,Se) compounds formation; 10 mum; CuI; CuIn(S,Se)2 quaternary compounds; CuIn(SSe)2; CuInSxSe2-x; close-spaced vapor transport; columnar grains; copper iodide; quasi-stoichiometric deposition; semiconductor thin films; thin film characterisation; thin film fabrication; vertical closed tube; Chemical elements; Copper; Fabrication; Inductors; Powders; Semiconductor thin films; Solids; Substrates; Temperature distribution; Transistors;
Conference_Titel :
Photovoltaic Energy Conversion, 1994., Conference Record of the Twenty Fourth. IEEE Photovoltaic Specialists Conference - 1994, 1994 IEEE First World Conference on
Conference_Location :
Waikoloa, HI
Print_ISBN :
0-7803-1460-3
DOI :
10.1109/WCPEC.1994.519854
