Title :
Admittance measurements on Cu(In,Ga)Se2 polycrystalline thin-film solar cells
Author :
Scofield, John H. ; Contreras, M. ; Gabor, A.M. ; Noufi, R. ; Sites, J.R.
Author_Institution :
Dept. of Phys., Oberlin Coll., OH, USA
Abstract :
The authors have measured the complex admittance for approximately 30 CIS and CIGS polycrystalline thin film solar cells having efficiencies of 12% or better. Measurements were performed for frequencies ranging from 1 to 1000 kHz and bias voltages from -2.0 to 0.4 V and were usually at room temperature. Capacitance versus voltage data were used to extract effective charge densities. Frequency-dependent capacitance and conductance data revealed information about trapping. While results vary from cell to cell, several common features emerge from the data. These results are described in this paper
Keywords :
copper compounds; electric admittance measurement; gallium compounds; indium compounds; semiconductor device testing; semiconductor thin films; solar cells; transient response; -2 to 0.4 V; 1 to 1000 kHz; C-V characteristics; Cu(In,Ga)Se2 thin-film solar cells; CuInGaSe2; bias voltage; complex admittance measurements; effective charge densities; frequency range; polycrystalline semiconductor; trapping; Admittance measurement; Capacitance; Computational Intelligence Society; Data mining; Frequency measurement; Performance evaluation; Photovoltaic cells; Temperature distribution; Transistors; Voltage;
Conference_Titel :
Photovoltaic Energy Conversion, 1994., Conference Record of the Twenty Fourth. IEEE Photovoltaic Specialists Conference - 1994, 1994 IEEE First World Conference on
Conference_Location :
Waikoloa, HI
Print_ISBN :
0-7803-1460-3
DOI :
10.1109/WCPEC.1994.519865
