• DocumentCode
    2985120
  • Title

    Optical properties of SiOx nanostructured films by pulsed-laser deposition

  • Author

    Chen, X.Y. ; Lu, Y.F.

  • Author_Institution
    Dept. of Electr. & Comput. Eng., Nat. Univ. of Singapore, Singapore
  • Volume
    3
  • fYear
    2005
  • fDate
    22-27 May 2005
  • Firstpage
    1745
  • Abstract
    SiOx nanostructured films were formed by pulsed-laser deposition (PLD) of Si. The photoluminescence band at 1.6-2.1 eV shifts with ambient gas pressure, substrate temperature and post-deposition processing, which supports the quantum confinement effect theory.
  • Keywords
    nanostructured materials; optical films; photoluminescence; pulsed laser deposition; silicon compounds; spectral line shift; thin films; 1 atm; 1.6 to 2.1 eV; Si; SiOx; SiOx films; ambient gas pressure; nanostructured films; optical properties; photoluminescence band; post-deposition processing; pulsed-laser deposition; quantum confinement effect theory; substrate temperature; Gas lasers; Optical films; Optical pulses; Optical sensors; Oxidation; Photoluminescence; Pulsed laser deposition; Semiconductor films; Substrates; Temperature;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Lasers and Electro-Optics, 2005. (CLEO). Conference on
  • Print_ISBN
    1-55752-795-4
  • Type

    conf

  • DOI
    10.1109/CLEO.2005.202261
  • Filename
    1573327
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2985120