DocumentCode :
2985438
Title :
Implementation of a low-power driver in 65 nanometer CMOS technology
Author :
Abed, Khalid H. ; Idris, Mohamed M.
Author_Institution :
Dept. of Comput. Eng., Jackson State Univ., Jackson, MS, USA
fYear :
2011
fDate :
17-20 March 2011
Firstpage :
232
Lastpage :
236
Abstract :
The objective of this paper is to investigate the design and implementation of driver circuits and find out the best fit driver for controlling power transistors. We implemented three drivers in 65 nanometer CMOS technology, and the design criteria for these drivers were mainly focused on reducing the power consumption, which is one of the most important specifications when designing portable consumer electronics. National Instruments Multisim design tool was used to simulate and verify the correct functionality of the designed drivers. While controlling the same power transistors, each of the three drivers ran at 100 MHz clock frequency with an input square wave that had a range between 0 to 1.2 Volts. To obtain the most accurate comparison, we computed the total power consumption of each driver and the same power transistors. The total power consumed by the tapered split-path driver circuit and the tapered driver circuit were 0.30 and 0.22 milliwatts, respectively. The total power consumption of the proposed low-power driver circuit was only 0.12 milliwatts, and the use of this power efficient driver in portable electronics will result in an increased operating time of batteries when compared with the other drivers.
Keywords :
CMOS integrated circuits; consumer electronics; driver circuits; low-power electronics; power transistors; CMOS technology; clock frequency; frequency 100 MHz; low-power driver circuit; national instrument Multisim design tool; portable consumer electronics; power 0.22 mW; power 0.30 mW; power consumption reduction; power transistors; size 65 nm; tapered split-path driver circuit; voltage 0 V to 1.2 V; CMOS integrated circuits; CMOS technology; Driver circuits; Inverters; MOS devices; Power dissipation; Power transistors;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Southeastcon, 2011 Proceedings of IEEE
Conference_Location :
Nashville, TN
ISSN :
1091-0050
Print_ISBN :
978-1-61284-739-9
Type :
conf
DOI :
10.1109/SECON.2011.5752940
Filename :
5752940
Link To Document :
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