DocumentCode
2985491
Title
Threshold and spectral characteristics of quantum dot lasers fabricated by selective area epitaxy
Author
Elarde, V.C. ; Coleman, J.J.
Author_Institution
Micro & Nanotechnol. Lab., Illinois Univ., Urbana, IL, USA
Volume
3
fYear
2005
fDate
22-27 May 2005
Firstpage
1802
Abstract
The threshold and spectral characteristics of patterned quantum dot lasers fabricated by selective area MOCVD crystal growth are presented Full three-dimensional confinement of carriers in an engineered quantum structure is demonstrated.
Keywords
MOCVD; quantum dot lasers; MOCVD crystal growth; carrier confinement; engineered quantum structure; quantum dot lasers; selective area epitaxy; spectral characteristics; three-dimensional confinement; threshold characteristics; Electron beams; Epitaxial growth; Optical materials; Optical waveguides; Quantum dot lasers; Quantum well lasers; Semiconductor lasers; Threshold current; US Department of Transportation; Waveguide lasers;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics, 2005. (CLEO). Conference on
Print_ISBN
1-55752-795-4
Type
conf
DOI
10.1109/CLEO.2005.202280
Filename
1573346
Link To Document