Title :
The method for integrating FBAR with circuitry on CMOS chip
Author :
Sung, Po-Hsun ; Fang, Chi-Ming ; Chang, Pei-Zen ; Chin, Yung-Chung ; Chen, Pei-Yen
Author_Institution :
Electron. Res. & Service Organ., Ind. Technol. Res. Inst., Tainan, Taiwan
Abstract :
A method is described to integrate a 3×2 ladder type film bulk acoustic wave (FBAR) filter on a CMOS chip. The modified Mason equivalent circuit model is used to simulate the FBAR characteristics. The filter is designed by the insertion loss method to meet the requirements. A low noise amplifier (LNA) has been designed and manufactured by the UMC 0.18 μm process. By the use of a post CMOS process, the FBAR filter structure can be realized on a CMOS chip. Finally, the mass loading frequency trimming method can adjust the center frequency of the FBAR. The feasibility of integration can be proved by this method.
Keywords :
CMOS analogue integrated circuits; UHF amplifiers; acoustic resonator filters; bulk acoustic wave devices; equivalent circuits; ladder filters; 0.18 micron; 1.96 GHz; FBAR filter; FBAR/CMOS integration; LNA; Mason equivalent circuit model; bulk acoustic wave resonator filter; centre frequency adjustment; insertion loss method; ladder filter; low noise amplifier; mass loading frequency trimming method; post CMOS process; Acoustic noise; Acoustic waves; CMOS process; Circuit simulation; Equivalent circuits; Film bulk acoustic resonators; Filters; Frequency; Insertion loss; Semiconductor device modeling;
Conference_Titel :
Frequency Control Symposium and Exposition, 2004. Proceedings of the 2004 IEEE International
Print_ISBN :
0-7803-8414-8
DOI :
10.1109/FREQ.2004.1418520
