The method for integrating FBAR with circuitry on CMOS chip

Author

Sung, Po-Hsun ; Fang, Chi-Ming ; Chang, Pei-Zen ; Chin, Yung-Chung ; Chen, Pei-Yen

Author_Institution

Electron. Res. & Service Organ., Ind. Technol. Res. Inst., Tainan, Taiwan

fYear

2004

fDate

23-27 Aug. 2004

Firstpage

562

Lastpage

565

Abstract

A method is described to integrate a 3×2 ladder type film bulk acoustic wave (FBAR) filter on a CMOS chip. The modified Mason equivalent circuit model is used to simulate the FBAR characteristics. The filter is designed by the insertion loss method to meet the requirements. A low noise amplifier (LNA) has been designed and manufactured by the UMC 0.18 μm process. By the use of a post CMOS process, the FBAR filter structure can be realized on a CMOS chip. Finally, the mass loading frequency trimming method can adjust the center frequency of the FBAR. The feasibility of integration can be proved by this method.

Keywords

CMOS analogue integrated circuits; UHF amplifiers; acoustic resonator filters; bulk acoustic wave devices; equivalent circuits; ladder filters; 0.18 micron; 1.96 GHz; FBAR filter; FBAR/CMOS integration; LNA; Mason equivalent circuit model; bulk acoustic wave resonator filter; centre frequency adjustment; insertion loss method; ladder filter; low noise amplifier; mass loading frequency trimming method; post CMOS process; Acoustic noise; Acoustic waves; CMOS process; Circuit simulation; Equivalent circuits; Film bulk acoustic resonators; Filters; Frequency; Insertion loss; Semiconductor device modeling;

fLanguage

English

Publisher

ieee

Conference_Titel

Frequency Control Symposium and Exposition, 2004. Proceedings of the 2004 IEEE International

ISSN

1075-6787

Print_ISBN

0-7803-8414-8

Type

conf

DOI

10.1109/FREQ.2004.1418520

Filename

1418520