• DocumentCode
    2985929
  • Title

    Improving the impact energy by using auxiliary electrode in a cylindrical bore

  • Author

    Zeng, X.C. ; Wang, S.Y. ; Xing, D.Z. ; Gao, Yuan ; Liu, A.G. ; Tang, B.Y. ; Chu, Paul K.

  • Author_Institution
    Dept. of Phys. & Mater. Sci., City Univ. of Hong Kong, Kowloon, Hong Kong
  • fYear
    1996
  • fDate
    3-5 June 1996
  • Firstpage
    176
  • Abstract
    Summary form only given. Plasma immersion ion implantation (PIII) is a promising technique for surface modification of materials. Because of its non line-of-sight process, there is the intriguing possibility of implanting "interior" surfaces. If the radius R of a bore is many Debye lengths, the bore will be plasma-filled and it is possible to implant into the sidewalls of the bore. Sheridan (1993) has found that the important length scale is the ion-matrix overlap, D=(/spl epsiv//sub 0//spl phi//en/sub 0/)/sup 1/2/ where /spl phi/ is the (negative) target potential and n/sub 0/ is the (uniform) plasma density. His recent research results indicate that ion implantation in small bores (R/spl les/D) is not very hopeful because the ion-matrix sheath overlap reduces the impact energy of the ions. We are proposing to use an auxiliary electrode, a conductive cylindrical bore which potential is always zero at the axis of the cylindrical bore, to improve the impact energy. We have calculated the structure of the ion-matrix sheath in an infinitely long cylindrical bore (R/spl les/D) with the auxiliary electrode and analyzed the dependence of its radius on the electric field in the bore. Our results show that the auxiliary electrode improves the distribution of the potential and electric field in the cylindrical bore.
  • Keywords
    ion implantation; auxiliary electrode; cylindrical bore; electric field; impact energy; implanting interior surfaces; ion-matrix overlap; ion-matrix sheath; plasma density; plasma immersion ion implantation; plasma-filled bore; surface modification; Australia; Boring; Electrodes; Implants; Ion implantation; Materials science and technology; Physics; Plasma density; Plasma immersion ion implantation; Plasma materials processing;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Plasma Science, 1996. IEEE Conference Record - Abstracts., 1996 IEEE International Conference on
  • Conference_Location
    Boston, MA, USA
  • ISSN
    0730-9244
  • Print_ISBN
    0-7803-3322-5
  • Type

    conf

  • DOI
    10.1109/PLASMA.1996.550734
  • Filename
    550734