Title :
Transport properties of doped silicon oxycarbide microcrystalline films produced by spatial separation techniques
Author :
Martins, Rodrìgo ; Vieira, Manuela ; Ferreira, Isabel ; Fortunato, Elvira ; Guimarães, L.
Author_Institution :
Dept. of Mater. Sci., New Univ. of Lisbon, Portugal
Abstract :
Presents results of the role of the oxygen partial pressure (p02) used on the properties exhibited by doped μc silicon oxycarbide films produced by a two consecutive decomposition and deposition chamber (TCDDC) system, where a spatial separation between the plasma and the growth regions is achieved. The films produced are highly conductive and transparent with suitable properties for optoelectronic applications. The film´s structure, composition, morphology and optoelectronic properties were analysed by means of grazing X-ray diffraction, electron secondary chemical analysis (ESCA), secondary ion mass spectroscopy (SIMS) as a function of temperature (T) and optical absorption (ranging from 300 to 80 K) measurements
Keywords :
X-ray diffraction; doping profiles; hopping conduction; light transmission; plasma CVD; plasma CVD coatings; reflectivity; refractive index; secondary ion mass spectra; semiconductor doping; semiconductor growth; semiconductor materials; semiconductor thin films; silicon compounds; spectrochemical analysis; transparency; 300 to 80 K; SIMS; Si80C16O4:P,B,H; Si89C7O4:P,B,H; doped silicon oxycarbide microcrystalline films; growth regions; highly conductive films; morphology; optoelectronic applications; oxygen partial pressure; plasma regions; spatial separation; spatial separation techniques; structure; transparent films; transport properties; two consecutive decomposition and deposition chamber; Chemical analysis; Conductive films; Morphology; Optical films; Plasma applications; Plasma chemistry; Plasma properties; Plasma x-ray sources; Semiconductor films; Silicon;
Conference_Titel :
Photovoltaic Energy Conversion, 1994., Conference Record of the Twenty Fourth. IEEE Photovoltaic Specialists Conference - 1994, 1994 IEEE First World Conference on
Conference_Location :
Waikoloa, HI
Print_ISBN :
0-7803-1460-3
DOI :
10.1109/WCPEC.1994.520009
