DocumentCode
298621
Title
Improvement of film stability of a-Si:H deposited by RPCVD using SiH2Cl2
Author
Chu, Mi Kyung ; Byun, Jae Seong ; Jeon, Hong Bin ; Lee, Kyung Ha ; Park, Min ; Park, Kyu Chang ; Jang, Jin ; Park, Hyuk Ryeol ; Kim, Dae Won ; Yoon, Kyung Shik
Author_Institution
Dept. of Phys., Kyung Hee Univ., Seoul, South Korea
Volume
1
fYear
1994
fDate
5-9 Dec 1994
Firstpage
547
Abstract
Hydrogenated amorphous silicon (a-Si:H) were prepared by remote plasma chemical deposition (RPCVD) using SiH4/SiH2Cl2/He/H2 mixtures. The defect density and Urbach energy of a-Si:H(:Cl) were found to be little affected by a small addition of SiH2Cl2 in SiH4. A small addition of H2 in SiH2Cl 2/SiH4 mixture improves the film quality. We deposited a-Si:H(:Cl) films with 6 at.% of hydrogen content and with 3×1015 cm-3 defect density which exhibited very small photoconductivity degradation during AM-1 illumination
Keywords
amorphous semiconductors; chemical vapour deposition; crystal defects; elemental semiconductors; hydrogen; photoconductivity; plasma CVD coatings; semiconductor thin films; silicon; solar cells; AM-1 illumination; RPCVD deposition; Si:H; Si:H,Cl; SiH4-SiH2Cl2-He-H2; SiH4/SiH2Cl2/He/H2 mixtures; Urbach energy; a-Si:H; a-Si:H(:Cl); defect density; film stability; photoconductivity degradation; remote plasma chemical deposition; Amorphous silicon; Chemicals; Degradation; Helium; Hydrogen; Lighting; Photoconductivity; Plasma chemistry; Plasma density; Plasma stability;
fLanguage
English
Publisher
ieee
Conference_Titel
Photovoltaic Energy Conversion, 1994., Conference Record of the Twenty Fourth. IEEE Photovoltaic Specialists Conference - 1994, 1994 IEEE First World Conference on
Conference_Location
Waikoloa, HI
Print_ISBN
0-7803-1460-3
Type
conf
DOI
10.1109/WCPEC.1994.520019
Filename
520019
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