Title :
Low bandgap a-Si:H film with better stability prepared by RF PECVD method using helium dilution
Author :
Ray, Swati ; Hazra, Sukti ; Middya, A.R. ; Barua, A.K.
Author_Institution :
Energy Res. Unit, IACS, Calcutta, India
Abstract :
Low bandgap a-Si:H films have been prepared by RF PECVD method (13.56 MHz) using helium as diluent to silane gas. Helium dilution and chamber pressure play an important role in reducing the optical gap at substrate temperature ~210°C. This highly photosensitive low bandgap material shows less light induced degradation compared to that for normal bandgap a-Si:H material. Single junction solar cells having efficiency 7.2% (1 cm2 area) and spectral response upto 850 nm have been fabricated using 1.6 eV a-Si:H film
Keywords :
amorphous semiconductors; chemical vapour deposition; elemental semiconductors; energy gap; hydrogen; plasma CVD coatings; semiconductor thin films; silicon; solar cells; stability; 13.56 MHz; 210 C; 7.2 percent; RF PECVD method; Si:H; chamber pressure; helium dilution; highly photosensitive low bandgap material; light induced degradation; low bandgap a-Si:H film; optical gap reduction; silane gas; single junction solar cells; spectral response; stability; substrate temperature; Degradation; Helium; Optical films; Optical materials; Photonic band gap; Photovoltaic cells; Radio frequency; Stability; Substrates; Temperature;
Conference_Titel :
Photovoltaic Energy Conversion, 1994., Conference Record of the Twenty Fourth. IEEE Photovoltaic Specialists Conference - 1994, 1994 IEEE First World Conference on
Conference_Location :
Waikoloa, HI
Print_ISBN :
0-7803-1460-3
DOI :
10.1109/WCPEC.1994.520020
