Low bandgap a-Si:H film with better stability prepared by RF PECVD method using helium dilution

Author

Ray, Swati ; Hazra, Sukti ; Middya, A.R. ; Barua, A.K.

Author_Institution

Energy Res. Unit, IACS, Calcutta, India

Volume

1

fYear

1994

fDate

5-9 Dec 1994

Firstpage

551

Abstract

Low bandgap a-Si:H films have been prepared by RF PECVD method (13.56 MHz) using helium as diluent to silane gas. Helium dilution and chamber pressure play an important role in reducing the optical gap at substrate temperature ~210°C. This highly photosensitive low bandgap material shows less light induced degradation compared to that for normal bandgap a-Si:H material. Single junction solar cells having efficiency 7.2% (1 cm² area) and spectral response upto 850 nm have been fabricated using 1.6 eV a-Si:H film

Keywords

amorphous semiconductors; chemical vapour deposition; elemental semiconductors; energy gap; hydrogen; plasma CVD coatings; semiconductor thin films; silicon; solar cells; stability; 13.56 MHz; 210 C; 7.2 percent; RF PECVD method; Si:H; chamber pressure; helium dilution; highly photosensitive low bandgap material; light induced degradation; low bandgap a-Si:H film; optical gap reduction; silane gas; single junction solar cells; spectral response; stability; substrate temperature; Degradation; Helium; Optical films; Optical materials; Photonic band gap; Photovoltaic cells; Radio frequency; Stability; Substrates; Temperature;

fLanguage

English

Publisher

ieee

Conference_Titel

Photovoltaic Energy Conversion, 1994., Conference Record of the Twenty Fourth. IEEE Photovoltaic Specialists Conference - 1994, 1994 IEEE First World Conference on

Conference_Location

Waikoloa, HI

Print_ISBN

0-7803-1460-3

Type

conf

DOI

10.1109/WCPEC.1994.520020

Filename

520020