DocumentCode :
2986220
Title :
Reliability of 1×5 μm2 emitter InAlAs/InGaAs HBTs under bias and thermal stress
Author :
Thomas, S. ; Chen, M. ; Bowen, R.
Author_Institution :
Hughes Res. Labs., Malibu, CA, USA
fYear :
2002
fDate :
20 Oct. 2002
Firstpage :
137
Lastpage :
152
Abstract :
InAlAs/InGaAs heterojunction bipolar transistors with emitter dimensions of 1×5 μm2 were subjected to elevated temperature, bias stress lifetests. The devices were stressed under DC bias at three elevated temperatures to allow the activation energy to be calculated. The devices were different from HBTs previously reported on by HRL in that the emitter width was reduced to 1 μm, the collector thickness was decreased from 700 to 200 nm, and the Be doping level was increased to decrease the sheet resistivity. Three separate failure criterion were considered with the most pessimistic predicting a MTTF of 3.6×107 hours at a junction temperature of 125°C.
Keywords :
III-V semiconductors; aluminium compounds; beryllium; failure analysis; gallium arsenide; heterojunction bipolar transistors; indium compounds; life testing; semiconductor device reliability; semiconductor device testing; 1 micron; 125 C; 200 nm; 3.6E7 hour; Be doping level; DC bias; InAlAs-InGaAs; InAlAs/InGaAs HBTs; MTTF; activation energy; bias stress lifetests; collector thickness; elevated temperature lifetests; emitter width; failure criterion; heterojunction bipolar transistors; sheet resistivity; Current density; Heterojunction bipolar transistors; Indium compounds; Indium gallium arsenide; Laboratories; Life testing; Packaging; System testing; Temperature; Thermal stresses;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
GaAs Reliability Workshop, 2002
Print_ISBN :
0-7908-0103-5
Type :
conf
DOI :
10.1109/GAAS.2002.1167931
Filename :
1167931
Link To Document :
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