High electron and hole drift mobility in a-Si:H [solar cells]

Author

Ganguly, Gautam ; Matsuda, Akihisa

Author_Institution

Electrotech. Lab., Ibaraki, Japan

Volume

1

fYear

1994

fDate

5-9 Dec 1994

Firstpage

559

Abstract

The mobility of electrons and holes are crucial to the performance of a-Si:H based solar photovoltaic devices. The authors have found that the mobilities of both electrons and holes can be varied over 2 orders of magnitude by control of the ion bombardment energies using the triode type PECVD. The carrier mobilities in the best samples so obtained are an order of magnitude higher than those available hereto, which should considerably enhance the performance of a-Si:H solar cells

Keywords

amorphous semiconductors; carrier mobility; elemental semiconductors; hydrogen; plasma CVD; plasma CVD coatings; semiconductor device testing; semiconductor doping; silicon; solar cells; Si:H; a-Si:H solar cells; amorphous semiconductor; carrier mobilities; electron drift mobility; hole drift mobility; ion bombardment energies; performance enhancement; triode type PECVD; Charge carrier processes; Electrodes; Electron mobility; Gold; Photovoltaic cells; Photovoltaic systems; Plasma measurements; Radio control; Radio frequency; Solar power generation;

fLanguage

English

Publisher

ieee

Conference_Titel

Photovoltaic Energy Conversion, 1994., Conference Record of the Twenty Fourth. IEEE Photovoltaic Specialists Conference - 1994, 1994 IEEE First World Conference on

Conference_Location

Waikoloa, HI

Print_ISBN

0-7803-1460-3

Type

conf

DOI

10.1109/WCPEC.1994.520022

Filename

520022