Investigation of short-term current gain stability of GaInP/GaAs-HBTs grown by MOVPE

Author

Brunner, F. ; Braun, A. ; Kurpas, P. ; Schneider, J. ; Würfl, J. ; Weyers, M.

Author_Institution

Ferdinand-Braun-Inst. fur Hochsfrequenstech., Berlin, Germany

fYear

2002

fDate

20 Oct. 2002

Firstpage

161

Lastpage

166

Abstract

Device performance and operation stability of GaInP/GaAs-based Heterojunction Bipolar Transistors (HBTs) are important factors for an increasing market share among the competing RF technologies. MOVPE growth of GaInP/GaAs HBT device structures with a carbon-doped base layer has been proven to ensure excellent transistor performance based on optimized base material quality This work deals with changes in DC-current gain of MOVPE-grown GaInP/GaAs HBTs during the first hours of operation under high current density stress. The influence of base-dopant concentration and hydrogen passivation on initial gain reduction were in the focus of research.

Keywords

III-V semiconductors; carbon; current density; gallium arsenide; gallium compounds; heterojunction bipolar transistors; hydrogen; indium compounds; passivation; semiconductor device reliability; stability; vapour phase epitaxial growth; C-doped base layer; DC-current gain; GaInP-GaAs:C; GaInP/GaAs HBTs; H redistribution; MOVPE-grown HBTs; base-dopant concentration; high current density stress; initial gain reduction; operation stability; optimized base material quality; passivation; short-term current gain stability; Current density; Epitaxial growth; Epitaxial layers; Gallium arsenide; Heterojunction bipolar transistors; Organic materials; Performance gain; Radio frequency; Stability; Stress;

fLanguage

English

Publisher

ieee

Conference_Titel

GaAs Reliability Workshop, 2002

Print_ISBN

0-7908-0103-5

Type

conf

DOI

10.1109/GAAS.2002.1167935

Filename

1167935