Degradation of a-Si:H solar cells: new evidence for a bulk effect

Author

Wyrsch, N. ; Shah, A.

Author_Institution

Inst. de Microtechnique, Neuchatel Univ., Switzerland

Volume

1

fYear

1994

fDate

5-9 Dec 1994

Firstpage

583

Abstract

Well defined sequences of nonuniform and uniform degradation steps are applied on several high quality bifacial p-i-n solar cells with different thicknesses of the intrinsic layer. This procedure allows one to separate interface and bulk effects in the degradation of a-Si:H solar cells, or more precisely to separate the influence of the modification of the internal electric field profile (due mainly to effect near the interface) from that of an increase in the deep defect density in the bulk; according to present data the latter is clearly responsible for the major part of a-Si:H solar cell degradation

Keywords

amorphous semiconductors; defect states; elemental semiconductors; hydrogen; p-n junctions; semiconductor device testing; semiconductor doping; silicon; solar cells; Si:H; a-Si:H solar cells; amorphous semiconductor; bifacial p-i-n solar cells; bulk effect; deep defect density; degradation tests; internal electric field profile; intrinsic layer; Degradation; Electrons; Lighting; Monitoring; PIN photodiodes; Performance evaluation; Photovoltaic cells; Simulated annealing; Strontium; Wavelength measurement;

fLanguage

English

Publisher

ieee

Conference_Titel

Photovoltaic Energy Conversion, 1994., Conference Record of the Twenty Fourth. IEEE Photovoltaic Specialists Conference - 1994, 1994 IEEE First World Conference on

Conference_Location

Waikoloa, HI

Print_ISBN

0-7803-1460-3

Type

conf

DOI

10.1109/WCPEC.1994.520028

Filename

520028