DocumentCode
2986398
Title
Observations on model based predictions for memristor power dissipation
Author
Gazabare, Swetha ; Pieper, Ron J. ; Wondmagegn, Wudyalew ; Satyala, Nikhil
Author_Institution
Dept. of Electr. Eng., Univ. of Texas at Tyler, Tyler, TX, USA
fYear
2011
fDate
17-20 March 2011
Firstpage
450
Lastpage
454
Abstract
Comparison is made between memristor linear, nonlinear drift models with Hewlett Packard (HP) experimental data using MATLAB mathematical model analysis. Average power predictions indicated that the experiment with 0.58mW and linear model with 0.86mW showed better agreement in comparison to nonlinear model with 1.17mW. Instantaneous power profile comparisons between both linear and nonlinear models with experimental data indicate that further modeling efforts are needed to capture details in instantaneous power profile for experimental data. Average power model-based predictions are nominally on the same order as the physical device.
Keywords
memristors; power aware computing; average power predictions; instantaneous power profile; linear drift model; memristor power dissipation; nonlinear drift model; power 0.58 mW; power 0.86 mW; Data models; Integrated circuit modeling; Mathematical model; Memristors; Predictive models; Resistance; Time frequency analysis;
fLanguage
English
Publisher
ieee
Conference_Titel
Southeastcon, 2011 Proceedings of IEEE
Conference_Location
Nashville, TN
ISSN
1091-0050
Print_ISBN
978-1-61284-739-9
Type
conf
DOI
10.1109/SECON.2011.5752984
Filename
5752984
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