Title :
Improving the stability of amorphous silicon tandem cells
Author :
Ouwens, J. Daey ; Schropp, R.E.I.
Author_Institution :
Dept. of Atomic & Interface Phys., Utrecht Univ., Netherlands
Abstract :
We present an optimization procedure for a-SiC:H/a-Si:H tandem cells to limit light induced degradation effects. Optimum deposition conditions are combined with an optimum light trapping configuration, that has been determined by optical modelling. Upon light soaking, a remarkable light-induced behaviour is observed. The open circuit voltage (Voc) in the degraded state is higher than in the annealed state
Keywords :
Staebler-Wronski effect; amorphous semiconductors; elemental semiconductors; hydrogen; optical saturable absorption; silicon; solar cells; SiC:H-Si:H; Staebler-Wronski effect; a-SiC:H/a-Si:H tandem cells; amorphous silicon tandem cells; annealed state; degraded state; light soaking; light-induced behaviour; open circuit voltage; optimization procedure; optimum deposition conditions; optimum light trapping configuration; stability improvement; Amorphous silicon; Bonding; Degradation; Hydrogen; Interference; Light scattering; Optical films; Optical scattering; Photonic band gap; Stability;
Conference_Titel :
Photovoltaic Energy Conversion, 1994., Conference Record of the Twenty Fourth. IEEE Photovoltaic Specialists Conference - 1994, 1994 IEEE First World Conference on
Conference_Location :
Waikoloa, HI
Print_ISBN :
0-7803-1460-3
DOI :
10.1109/WCPEC.1994.520045
