Light-induced changes in hydrogenated amorphous silicon: anomalous recombination behaviour at low temperatures

Author

Cornish, J.C.L. ; Subaer ; Jennings, P. ; Hefter, G.T.

Author_Institution

Sch. of Math. & Phys. Sci., Murdoch Univ., WA, Australia

Volume

1

fYear

1994

fDate

5-9 Dec 1994

Firstpage

686

Abstract

The open circuit voltage decay (OCVD) method has been used to characterise a-Si:H, p-i-n photovoltaic cells over a range of temperatures from 228 K to 291 K. We have found that the form of the OCVD voltage-time curves is sensitive to light soaking: the curves at different temperatures for as-deposited samples are nested inside each other with similar overall decay times, whereas, for the light soaked samples, as the temperature decreased the decay time increases markedly successive curves overlap. Our preliminary results indicate that the phenomena observed may be related to the overshoot in the transient photocurrent observed by other researchers under similar conditions

Keywords

CVD coatings; amorphous semiconductors; electron-hole recombination; elemental semiconductors; hydrogen; optical saturable absorption; photoconductivity; plasma CVD coatings; semiconductor thin films; silicon; solar cells; voltage measurement; 228 to 291 K; Si:H; a-Si:H p-i-n photovoltaic cells; anomalous recombination behaviour; light soaking; light-induced changes; low temperatures; open circuit voltage decay; overshoot; plasma enhanced CVD coating; transient photocurrent; voltage-time curves; Amorphous silicon; Charge carrier lifetime; Circuits; Oscilloscopes; PIN photodiodes; Radiative recombination; Tellurium; Temperature distribution; Temperature sensors; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Photovoltaic Energy Conversion, 1994., Conference Record of the Twenty Fourth. IEEE Photovoltaic Specialists Conference - 1994, 1994 IEEE First World Conference on

Conference_Location

Waikoloa, HI

Print_ISBN

0-7803-1460-3

Type

conf

DOI

10.1109/WCPEC.1994.520054

Filename

520054