CMOS Radio with an Integrated 26dBm Power Amplifier for a Complete System-on-Chip Cordless Phone

A fully integrated transceiver in a 0.13 mum CMOS technology including on-chip power amplifier (PA) for digital cordless telephone standards is presented. The PA exhibits an output power of P_OUT = 26 dBm. The implemented frequency synthesizer shows robustness against PA coupling, excellent phase noise performance and fast settling time. The fully integrated receiver deploys a low intermediate frequency (IF) architecture with a very low noise, low current consumption front-end and a complex band pass filter for channel selection. The receiver is measured to achieve a sensitivity level of P_0.1% = -96 dBm. The transceiver uses I_TX = 35 mA in transmit mode and I_RX = 25 mA in receive mode from a regulated V_TRX = 1.5 V supply. The PA shows a power added efficiency (PAE) of more than 30% at a V_PA = 2.5 V direct-connect-to-battery supply. The transceiver is developed as a part of a complete system-on-chip (SoC) cordless phone.