Title :
Thick graphene transfer and RIE etching for chip cooling
Author :
Woongkyu Choi ; Jinwoo Jeong ; Kukjin Chun ; Byung Do Lee
Author_Institution :
Dept. of Electr. & Comput. Eng., Seoul Nat. Univ., Seoul, South Korea
Abstract :
Thick graphene which was grown by Chemical Vapor Deposition(CVD) on Nickel substrate and had thickness range about 500nm ~ 1μm was transferred into Si wafer using Hot Pressing with Thermal Release Tape(TRT). After transferring thick graphene into Si wafer, Scotch tape peeling test and Raman spectrum analysis were conducted. Patterning of thick graphene was demonstrated by RIE process with O2, Ar gas. Thick graphene etch rate is about 100nm/min at a etching condition which is O2-70sccm, Ar-30sccm, chamber pressure-0.055Torr, RF power-150W.
Keywords :
chemical vapour deposition; cooling; elemental semiconductors; graphene; hot pressing; nickel; semiconductor growth; silicon; sputter etching; Ni; RIE etching; Raman spectrum analysis; Si; chemical vapor deposition; chip cooling; hot pressing; peeling test; power 150 W; thermal release tape; thick graphene transfer; Carbon; Etching; Graphene; Pressing; Substrates; Thermal conductivity; Three-dimensional displays; Chip cooling; Etching thick graphene; Thick graphene; Tranferring thick graphene;
Conference_Titel :
TENCON 2013 - 2013 IEEE Region 10 Conference (31194)
Conference_Location :
Xi´an
Print_ISBN :
978-1-4799-2825-5
DOI :
10.1109/TENCON.2013.6719044
