Title :
A New Failure Mechanism And Its Improvement On Gate Oxide Reliability At Field Edge By Locos Isoiation
Author :
Takahashi, M. ; Uchida, H. ; Nagatomo, Y. ; Hirashita, N. ; lno, M.
Author_Institution :
Oki Electric Industry Co., Ltd.
Keywords :
Annealing; Current-voltage characteristics; Degradation; Dielectric breakdown; Electrodes; Failure analysis; Leakage current; MOS capacitors; Oxidation; Voltage;
Conference_Titel :
Device Research Conference, 1992. Digest. 50th Annual
Conference_Location :
Cambridge, MA, USA
DOI :
10.1109/DRC.1992.671905
