DocumentCode
2987497
Title
Ultra Low-Capacitance Bond Pad for RF Applications in CMOS Technology
Author
Hsiao, Yuan-Wen ; Ker, Ming-Dou
Author_Institution
Nat. Chiao-Tung Univ., Hsinchu
fYear
2007
fDate
3-5 June 2007
Firstpage
303
Lastpage
306
Abstract
A low-capacitance bond pad for gigahertz RF applications is proposed. Three kinds of on-chip inductors embedded under the traditional bond pad are used to compensate bond-pad capacitance. Experimental results have verified that bond-pad capacitance can be significantly reduced in a specific frequency band due to the cancellation effect provided by the embedded inductor in the proposed bond pad. The proposed bond pad is fully compatible to general CMOS processes without any process modification.
Keywords
CMOS integrated circuits; capacitance; inductors; radiofrequency integrated circuits; CMOS technology; gigahertz RF application; onchip inductor; ultra low-capacitance bond pad; Bonding; CMOS process; CMOS technology; Electrostatic discharge; Inductors; Parasitic capacitance; Protection; Radio frequency; Radiofrequency integrated circuits; Silicon; Bond pad; capacitance; radio-frequency integrated circuit (RF IC); signal loss;
fLanguage
English
Publisher
ieee
Conference_Titel
Radio Frequency Integrated Circuits (RFIC) Symposium, 2007 IEEE
Conference_Location
Honolulu, HI
ISSN
1529-2517
Print_ISBN
1-4244-0530-0
Electronic_ISBN
1529-2517
Type
conf
DOI
10.1109/RFIC.2007.380888
Filename
4266436
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