Title :
Ultra Low-Capacitance Bond Pad for RF Applications in CMOS Technology
Author :
Hsiao, Yuan-Wen ; Ker, Ming-Dou
Author_Institution :
Nat. Chiao-Tung Univ., Hsinchu
Abstract :
A low-capacitance bond pad for gigahertz RF applications is proposed. Three kinds of on-chip inductors embedded under the traditional bond pad are used to compensate bond-pad capacitance. Experimental results have verified that bond-pad capacitance can be significantly reduced in a specific frequency band due to the cancellation effect provided by the embedded inductor in the proposed bond pad. The proposed bond pad is fully compatible to general CMOS processes without any process modification.
Keywords :
CMOS integrated circuits; capacitance; inductors; radiofrequency integrated circuits; CMOS technology; gigahertz RF application; onchip inductor; ultra low-capacitance bond pad; Bonding; CMOS process; CMOS technology; Electrostatic discharge; Inductors; Parasitic capacitance; Protection; Radio frequency; Radiofrequency integrated circuits; Silicon; Bond pad; capacitance; radio-frequency integrated circuit (RF IC); signal loss;
Conference_Titel :
Radio Frequency Integrated Circuits (RFIC) Symposium, 2007 IEEE
Conference_Location :
Honolulu, HI
Print_ISBN :
1-4244-0530-0
Electronic_ISBN :
1529-2517
DOI :
10.1109/RFIC.2007.380888