DocumentCode
2987582
Title
Observation of anomalously large band-filling effects in InAs/GaSb type-II superlattices: from 2-D to 3-D
Author
Mu, Xiaodong ; Ding, Yujie J. ; Little, John
Author_Institution
Dept. of Electr. & Comput. Eng., Lehigh Univ., Bethlehem, PA, USA
Volume
3
fYear
2005
fDate
22-27 May 2005
Firstpage
2126
Abstract
We have demonstrated that type-II InAs/GaSb superlattices exhibit anomalously strong band-filling effects. By varying the width of the barrier or well, we have investigated the effects from 2-D quantum wells to quasi-3-D superlattices.
Keywords
III-V semiconductors; gallium compounds; indium compounds; photoluminescence; semiconductor quantum wells; semiconductor superlattices; 2-D quantum wells; InAs-GaSb; InAs/GaSb type-II superlattices; band-filling effects; quasi3-D superlattices; Buffer layers; Electron devices; Laboratories; Lasers and electrooptics; Luminescence; Military computing; Photoluminescence; Pump lasers; Semiconductor superlattices; Temperature;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics, 2005. (CLEO). Conference on
Print_ISBN
1-55752-795-4
Type
conf
DOI
10.1109/CLEO.2005.202390
Filename
1573456
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