Title :
Piezoelectricity in (100) III-V semiconductors
Author :
Stievater, T.H. ; Rabinovich, W.S. ; Park, D. ; Boos, J.B. ; Biermann, M.L. ; Kanakaraju, S. ; Calhoun, L.C.
Author_Institution :
Naval Res. Lab., Washington, DC, USA
Abstract :
We experimentally demonstrate the presence of internal piezoelectric fields in (100)-oriented III-V semiconductor heterostructures. The piezoelectric fields are produced by internal shear strain engineered in InGaAs quantum well microbridges.
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; optical materials; piezoelectricity; semiconductor heterojunctions; semiconductor quantum wells; III-V semiconductor heterostructures; InGaAs; InGaAs quantum well microbridges; internal shear strain; piezoelectricity; Bridges; Capacitive sensors; III-V semiconductor materials; Indium gallium arsenide; Laboratories; Piezoelectric devices; Piezoelectricity; Quantum well devices; Substrates; Wet etching;
Conference_Titel :
Lasers and Electro-Optics, 2005. (CLEO). Conference on
Print_ISBN :
1-55752-795-4
DOI :
10.1109/CLEO.2005.202391
