Title :
Investigation of the carrier dynamics of strain compensated InGaAsN quantum wells
Author :
Xu, LiFang ; Patel, D. ; Vaschenko, G. ; Antón, O. ; Menoni, C.S. ; Yeh, Jeng-Ya ; Roy, Tod T Van ; Mawst, L.J. ; Tansu, Nelson
Author_Institution :
Dept. of Electr. & Comput. Eng., Colorado State Univ., Fort Collins, CO, USA
Abstract :
A quantum dot-like behavior in the dynamics of carrier recombination is observed in InGaAsN quantum wells at temperatures at and below ∼ 150 K. At higher temperatures defect recombination plays a dominant role.
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; optical materials; photoluminescence; semiconductor quantum dots; semiconductor quantum wells; wide band gap semiconductors; InGaAsN; InGaAsN quantum wells; carrier recombination; defect recombination; quantum dot-like behavior; strain compensation; Capacitive sensors; Energy states; Gallium arsenide; Indium gallium arsenide; Nitrogen; Photonic band gap; Quantum computing; Quantum dots; Radiative recombination; Temperature;
Conference_Titel :
Lasers and Electro-Optics, 2005. (CLEO). Conference on
Print_ISBN :
1-55752-795-4
DOI :
10.1109/CLEO.2005.202393
