Title :
Growth and characterization of SiGe layers on Ge-lattice-matched substrates by MBE for long wavelength optical devices
Author :
Kuo, Y.-H. ; Yu, X. ; Fu, J. ; Solomon, G.S. ; Harris, J.S., Jr. ; Kamins, T.I.
Author_Institution :
Solid State & Photonics Lab., Stanford Univ., CA, USA
Abstract :
Fully-strained and high-quality Ge-rich SiGe films are grown on Ge-lattice-matched substrates by molecular beam epitaxy. Ge/SiGe quantum well structures are characterized by low-temperature photoluminescence and exhibit efficient quantum confinement and band edge emission.
Keywords :
Ge-Si alloys; molecular beam epitaxial growth; optical materials; photoluminescence; semiconductor growth; semiconductor materials; silicon compounds; substrates; Ge-SiGe; Ge-lattice-matched substrates; Ge/SiGe quantum well; MBE; SiGe layers; band edge emission; molecular beam epitaxy; photoluminescence; quantum confinement; Gallium arsenide; Germanium silicon alloys; Molecular beam epitaxial growth; Optical devices; Optical films; Photoluminescence; Semiconductor films; Silicon germanium; Substrates; Temperature;
Conference_Titel :
Lasers and Electro-Optics, 2005. (CLEO). Conference on
Print_ISBN :
1-55752-795-4
DOI :
10.1109/CLEO.2005.202394
