Title :
Structural and optical studies of In(Ga)P nanowires grown on Si(111) substrates by MOCVD
Author :
Chuang, Linus C. ; Kobayashi, Nobuhiko P. ; Kim, Eui-Tae ; Chang-Hasnain, Connie ; Kuykendall, Tev ; Sirbuly, Don ; Yang, Peidong
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., California Univ., Berkeley, CA, USA
Abstract :
We demonstrated the synthesis of In(Ga)P nanowires on silicon using MOCVD at temperatures 350∼430 °C. PL studies on the In(Ga)P nanowires indicate their tenability of optical properties in spite of a large lattice mismatch 8.07%.
Keywords :
III-V semiconductors; MOCVD; gallium compounds; indium compounds; nanotechnology; nanowires; optical materials; photoluminescence; semiconductor growth; semiconductor quantum wires; In(Ga)P nanowires; InGaP; MOCVD; Si; Si(111) substrates; lattice mismatch; photoluminescence; III-V semiconductor materials; Indium phosphide; Lattices; Light emitting diodes; MOCVD; Nanowires; Semiconductor nanostructures; Silicon; Substrates; Temperature distribution;
Conference_Titel :
Lasers and Electro-Optics, 2005. (CLEO). Conference on
Print_ISBN :
1-55752-795-4
DOI :
10.1109/CLEO.2005.202395
