DocumentCode
2987638
Title
Direct Extraction Techniques for Thermal Resistance of MESFET and HEMT Devices
Author
Angelov, Iltcho ; Kärnfelt, Camilla
Author_Institution
Chalmers Univ. of Technol., Goteborg
fYear
2007
fDate
3-5 June 2007
Firstpage
351
Lastpage
354
Abstract
A simple technique for direct extraction of junction temperature and thermal resistance for MESFET and HEMT FET is proposed and experimentally evaluated. The techniques were applied for thermal resistance extraction of the mHEMT devices in a microstrip three-stage amplifier before and after flip chip assembly.
Keywords
Schottky gate field effect transistors; amplifiers; high electron mobility transistors; microstrip circuits; HEMT device; MESFET device; direct extraction technique; flip chip assembly; high electron mobility transistor; microstrip three-stage amplifier; thermal resistance; Assembly; Electrical resistance measurement; Electronic packaging thermal management; Equations; FETs; Flip chip; HEMTs; MESFETs; Temperature dependence; Thermal resistance; FET; Flip chip; Thermal resistance; Transistor Models;
fLanguage
English
Publisher
ieee
Conference_Titel
Radio Frequency Integrated Circuits (RFIC) Symposium, 2007 IEEE
Conference_Location
Honolulu, HI
ISSN
1529-2517
Print_ISBN
1-4244-0530-0
Electronic_ISBN
1529-2517
Type
conf
DOI
10.1109/RFIC.2007.380899
Filename
4266447
Link To Document