DocumentCode
2987848
Title
Near-infrared femtosecond laser-processed thin-film transistor
Author
Chen, Zun-Hao ; Shieh, Jia-Min ; Dai, Bau-Tong ; Wang, Yi-Chao ; Pan, Ci-Ling
Author_Institution
Nat. Nano Device Lab., Hsinchu, Taiwan
Volume
3
fYear
2005
fDate
22-27 May 2005
Firstpage
2182
Abstract
Near-infrared (800 nm wavelength) femtosecond laser annealing (FLA) is employed on crystallization and activation of amorphous Si regions of thin film transistors (TFT). The transfer, and output characteristics for FLA-processed TFTs show promising performances.
Keywords
amorphous semiconductors; crystallisation; elemental semiconductors; high-speed optical techniques; infrared sources; laser beam annealing; semiconductor technology; silicon; thin film transistors; 800 nm; Si; amorphous Si; crystallization; femtosecond laser annealing; thin-film transistor; Active matrix liquid crystal displays; Amorphous materials; Annealing; Crystallization; Lasers and electrooptics; Pulsed laser deposition; Semiconductor lasers; Thin film transistors; Ultrafast optics; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics, 2005. (CLEO). Conference on
Print_ISBN
1-55752-795-4
Type
conf
DOI
10.1109/CLEO.2005.202410
Filename
1573476
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