DocumentCode
2987916
Title
Physics-based FET noise model applicable to millimeter-wave frequencies
Author
Daehee Lee ; Youngwoo Kwon ; Hong-Shick Min
Author_Institution
Sch. of Electr. Eng., Seoul Nat. Univ., South Korea
Volume
1
fYear
1999
fDate
13-19 June 1999
Firstpage
109
Abstract
A physics-based FET noise model applicable to MM-wave frequencies is presented. The noise model is based on the short-circuit noise current derived from a 2-D noise equi-potential surface analysis. The model requires only one fitting parameter and includes the feedback effect of C/sub gd/, so that it can be valid at frequencies close to f/sub max/. Good agreement with measurement was found up to 100 GHz.
Keywords
equivalent circuits; feedback; millimetre wave field effect transistors; semiconductor device models; semiconductor device noise; 100 GHz; 2D noise equi-potential surface analysis; EHF; MM-wave FET; feedback effect; fitting parameter; millimeter-wave frequencies; physics-based FET noise model; short-circuit noise current; Circuit noise; Electronic mail; Equivalent circuits; FETs; Feedback; Fluctuations; Frequency estimation; Gallium arsenide; Millimeter wave technology; Temperature;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Symposium Digest, 1999 IEEE MTT-S International
Conference_Location
Anaheim, CA, USA
Print_ISBN
0-7803-5135-5
Type
conf
DOI
10.1109/MWSYM.1999.779436
Filename
779436
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