Title :
Heterogeneously Integrated 10Gb/s CMOS Optoelectronic Receiver for Long Haul Telecommunication
Author :
Sharifi, Hasan ; Mohammadi, Saeed
Author_Institution :
Purdue Univ., West Lafayette
Abstract :
A fully integrated 10 Gb/s 1.3 to 1.55 mum CMOS optoelectronic receiver is demonstrated for the first time. By heterogeneously integrating of a CMOS transimpedance amplifier (TIA) with an InGaAs/InP PIN photodiode using a recently developed self-aligned wafer-level integration technology (SAWLIT), operation at 10 Gb/s is achieved. The CMOS transimpedance amplifier exhibits a transimpedance gain of 51 dBOmega and a bandwidth of 6.1 GHz.
Keywords :
CMOS integrated circuits; gallium arsenide; indium compounds; integrated optoelectronics; microwave integrated circuits; optical receivers; p-i-n photodiodes; CMOS transimpedance amplifier; InGaAs-InP; PIN photodiode; bandwidth 6.1 GHz; bit rate 10 Gbit/s; heterogeneously integrated CMOS optoelectronic receiver; long haul telecommunication; microwave integrated circuit; self-aligned wafer-level integration technology; wavelength 1.3 mum to 1.55 mum; Bandwidth; Broadband amplifiers; CMOS technology; Indium phosphide; Optical amplifiers; Optical receivers; Optical sensors; PIN photodiodes; Parasitic capacitance; Semiconductor optical amplifiers; Advanced Electronic Packaging; CMOS analog integrated circuits; Optoelectronic receiver; PIN photodiode; Transimpedance amplifier;
Conference_Titel :
Radio Frequency Integrated Circuits (RFIC) Symposium, 2007 IEEE
Conference_Location :
Honolulu, HI
Print_ISBN :
1-4244-0530-0
Electronic_ISBN :
1529-2517
DOI :
10.1109/RFIC.2007.380936
