Novel Collector Structure Enabling Low-Cost Millimeter-Wave SiGe:C BiCMOS Technology

Author

John, Jay P. ; Kirchgessner, Jim ; Morgan, Dave ; Hildreth, Jill ; Dawdy, Morgan ; Reuter, Ralf ; Li, Hao

Author_Institution

Freescale Semicond., Tempe

fYear

2007

fDate

3-5 June 2007

Firstpage

559

Lastpage

562

Abstract

A millimeter-wave selective-epi, SiGe:C HBT is described, utilizing a novel, low-cost collector construction. A cutoff frequency (f_T) of 200 GHz and a maximum oscillation frequency (f_MAX) of 300 GHz is achieved using a self-aligned selective-epi base structure. For a SiGe:C HBT, this is the highest known f_MAX obtained without the use of buried layer or deep trench isolation.

Keywords

BiCMOS integrated circuits; Ge-Si alloys; carbon; field effect MIMIC; heterojunction bipolar transistors; millimetre wave bipolar transistors; BiCMOS; SiGe:C; collector structure; cutoff frequency; frequency 200 GHz; heterojunction bipolar transistors; millimeter-wave selective-epi; oscillation frequency; BiCMOS integrated circuits; Cutoff frequency; Heterojunction bipolar transistors; Implants; Integrated circuit technology; Isolation technology; Millimeter wave circuits; Millimeter wave technology; Millimeter wave transistors; Radio frequency; Bipolar transistors; Heterojunction bipolar transistors; Millimeter wave bipolar integrated circuits; Silicon Germanium; Silicon bipolar/BiCMOS process technology;

fLanguage

English

Publisher

ieee

Conference_Titel

Radio Frequency Integrated Circuits (RFIC) Symposium, 2007 IEEE

Conference_Location

Honolulu, HI

ISSN

1529-2517

Print_ISBN

1-4244-0530-0

Electronic_ISBN

1529-2517

Type

conf

DOI

10.1109/RFIC.2007.380946

Filename

4266494