Title :
Progress in high power SiC microwave MESFETs
Author :
Allen, S.T. ; Pribble, W.L. ; Sadler, R.A. ; Alcorn, T.S. ; Ring, Z. ; Palmour, J.W.
Author_Institution :
Cree Res. Inc., Durham, NC, USA
Abstract :
SiC MESFET´s have shown an RF power density of 4.6 W/mm at 3.5 GHz and a power added efficiency of 60% with 3 W/mm at 800 MHz, demonstrating that SiC devices are capable of very high power densities and high efficiencies. Single devices with 48 mm of gate periphery were mounted in a hybrid circuit and achieved a maximum RF power of 80 watts CW at 3.1 GHz with 38% PAE.
Keywords :
UHF field effect transistors; microwave field effect transistors; microwave power transistors; power MESFET; silicon compounds; wide band gap semiconductors; 38 percent; 60 percent; 80 W; 800 MHz to 3.5 GHz; RF power density; SiC; SiC microwave MESFETs; high power MESFETs; power added efficiency; Breakdown voltage; Doping; Gallium arsenide; MESFETs; Microwave devices; Photonic band gap; Radio frequency; Silicon carbide; Substrates; Thermal conductivity;
Conference_Titel :
Microwave Symposium Digest, 1999 IEEE MTT-S International
Conference_Location :
Anaheim, CA, USA
Print_ISBN :
0-7803-5135-5
DOI :
10.1109/MWSYM.1999.779484
