DocumentCode
2988758
Title
Progress in high power SiC microwave MESFETs
Author
Allen, S.T. ; Pribble, W.L. ; Sadler, R.A. ; Alcorn, T.S. ; Ring, Z. ; Palmour, J.W.
Author_Institution
Cree Res. Inc., Durham, NC, USA
Volume
1
fYear
1999
fDate
13-19 June 1999
Firstpage
321
Abstract
SiC MESFET´s have shown an RF power density of 4.6 W/mm at 3.5 GHz and a power added efficiency of 60% with 3 W/mm at 800 MHz, demonstrating that SiC devices are capable of very high power densities and high efficiencies. Single devices with 48 mm of gate periphery were mounted in a hybrid circuit and achieved a maximum RF power of 80 watts CW at 3.1 GHz with 38% PAE.
Keywords
UHF field effect transistors; microwave field effect transistors; microwave power transistors; power MESFET; silicon compounds; wide band gap semiconductors; 38 percent; 60 percent; 80 W; 800 MHz to 3.5 GHz; RF power density; SiC; SiC microwave MESFETs; high power MESFETs; power added efficiency; Breakdown voltage; Doping; Gallium arsenide; MESFETs; Microwave devices; Photonic band gap; Radio frequency; Silicon carbide; Substrates; Thermal conductivity;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Symposium Digest, 1999 IEEE MTT-S International
Conference_Location
Anaheim, CA, USA
Print_ISBN
0-7803-5135-5
Type
conf
DOI
10.1109/MWSYM.1999.779484
Filename
779484
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