A 2 mW, Sub-2 dB Noise Figure, SiGe Low-Noise Amplifier For X-band High-Altitude or Space-based Radar Applications

Author

Thrivikraman, Tushar K. ; Kuo, Wei-Min Lance ; Comeau, Jonathan P. ; Sutton, Akil K. ; Cressler, John D. ; Marshall, Paul W. ; Mitchell, Mark A.

Author_Institution

Georgia Inst. of Technol., Atlanta

fYear

2007

fDate

3-5 June 2007

Firstpage

629

Lastpage

632

Abstract

This paper presents a low-power X-band low-noise amplifier (LNA) implemented in silicon-germanium (SiGe) technology targeting high-altitude or space-based low-power density phased-array radar systems. To our knowledge, this X-band LNA is the first in a Si-based technology to achieve less than 2 dB mean noise figure while dissipating only 2 mW from a 1.5 V power supply. The gain of the circuit is 10 dB at 10 GHz with an IIP ₃ of 0 dBm. In addition to standard amplifier characterization, the LNA´s total dose radiation response has been evaluated.

Keywords

germanium compounds; low noise amplifiers; microwave amplifiers; phased array radar; radar applications; silicon compounds; spaceborne radar; SiGe; SiGe technology; X-band high-altitude radar; frequency 10 GHz; low-noise amplifier; low-power X-band LNA; phased-array radar system; power 2 mW; space-based radar application; voltage 1.5 V; Germanium silicon alloys; Impedance; Integrated circuit noise; Low-noise amplifiers; Noise figure; Noise measurement; Radar applications; Silicon germanium; Space technology; Spaceborne radar;

fLanguage

English

Publisher

ieee

Conference_Titel

Radio Frequency Integrated Circuits (RFIC) Symposium, 2007 IEEE

Conference_Location

Honolulu, HI

ISSN

1529-2517

Print_ISBN

1-4244-0530-0

Electronic_ISBN

1529-2517

Type

conf

DOI

10.1109/RFIC.2007.380962

Filename

4266510